K₄Ge₂Se₆ is a mixed-metal chalcogenide semiconductor compound combining potassium, germanium, and selenium in a layered crystal structure. This material is primarily investigated in research contexts for infrared optics and solid-state electronics, where the selenium and germanium framework creates tunable bandgap characteristics valuable for detecting and manipulating infrared radiation. As an experimental compound rather than an established industrial material, K₄Ge₂Se₆ represents the broader class of chalcogenide semiconductors that offer advantages over traditional materials in mid- to far-infrared applications where transparency and nonlinear optical response are critical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,575.3 | ksi | — | ||
Shear Modulus(G) | 1,324.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.589 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9120 | eV/atom | — |