K₄As₄O₈ is an arsenic-containing oxyanion compound belonging to the family of potassium arsenates, a class of inorganic semiconductors with layered or framework crystal structures. This material is primarily of research interest rather than established industrial production, studied for potential applications in solid-state electronics, photocatalysis, and specialty glass formulations where arsenic oxide semiconductors show promise for wide bandgap behavior and optoelectronic response.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.680 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.672 | eV/atom | — |