K₄As₂Cd₁ is a ternary compound semiconductor combining potassium, arsenic, and cadmium elements. This is a specialized research material rather than a commercial product, belonging to the family of mixed-metal arsenide semiconductors with potential applications in optoelectronic and photovoltaic research where band gap engineering and carrier transport properties are being explored.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2137 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4960 | eV/atom | — |