K3 Y1 is a semiconductor material with yttrium as a key constituent, likely part of the rare-earth or oxide-based semiconductor family. While the specific composition is not fully specified in available documentation, materials in this class are typically investigated for optoelectronic and high-temperature semiconductor applications where conventional silicon or GaAs devices are limited. The material's mechanical properties suggest potential utility in applications requiring both electronic functionality and structural integrity, making it relevant to researchers exploring next-generation semiconductor compounds for niche industrial and defense applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,058.8 | ksi | — | ||
Shear Modulus(G) | 591.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00290 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5270 | eV/atom | — |