K3I1O1 is a potassium iodide oxide compound classified as a semiconductor material. This ternary oxide compound represents an experimental or specialized composition that combines potassium, iodine, and oxygen—a relatively uncommon combination in conventional semiconductor applications. The material's semiconductor characteristics and mechanical properties suggest potential research applications in niche areas such as optical devices, ionizing radiation detection, or advanced ceramic systems where the unique electronic behavior of mixed-anion compounds may offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.67 | GPa | — | ||
Shear Modulus(G) | 15.58 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.426 | eV/atom | — |