K2TeI6 is a halide perovskite semiconductor compound combining potassium, tellurium, and iodine. This is primarily a research material studied for optoelectronic and photovoltaic applications, representing the broader family of lead-free halide perovskites being explored as safer alternatives to conventional perovskite solar cells. Engineers investigating this compound are typically motivated by its potential for tunable bandgap, solution processability, and reduced toxicity compared to lead-based perovskites, though commercial-scale production and long-term stability remain active research challenges.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,963.8 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3400 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 773.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1553 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.600 | eV | DFT · OptB88vdW | ||
| ↳ | 1.982 | eV | DFT · TBmBJ | ||
| ↳ | 1.380 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.773 | - | DFT · OptB88vdW | ||
| ↳ | 6.447 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.8867 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.297 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00137 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000764 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -235.6 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 315.1 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 23.37 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7941 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data