K2NaInAs2 is a ternary ceramic compound belonging to the chalcopyrite family of semiconductors, combining potassium, sodium, indium, and arsenic. This is a research-phase material primarily investigated for optoelectronic and photovoltaic applications where compound semiconductors offer band-gap engineering advantages over elemental materials. The mixed-alkali composition and arsenic-based structure position it within emerging thin-film solar cell and infrared detector development, though industrial adoption remains limited compared to established alternatives like GaAs or InAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23.59 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 14.05 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.449 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7150 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.35 range 8.235–14.46median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -76.13 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5609 | eV/atom | — |