K2GeAs2 is an inorganic ceramic compound composed of potassium, germanium, and arsenic. This material belongs to the family of ternary semiconducting ceramics and represents a research-phase compound rather than an established commercial material, with potential applications in optoelectronic and photonic device development where chalcogenide-like properties are desired.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.228 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8230 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.01 range 7.319–12.71median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -300.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4479 | eV/atom | — |