K2Bi8Se13 is a quaternary chalcogenide semiconductor compound combining potassium, bismuth, and selenium in a layered crystal structure. This material belongs to the family of bismuth-based selenides, which are of significant research interest for thermoelectric and optoelectronic applications due to their narrow bandgap and layered topology. While primarily a laboratory compound rather than a commercial product, K2Bi8Se13 represents the broader potential of complex chalcogenide systems for energy conversion and advanced electronics where low thermal conductivity coupled with electronic functionality is advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k)2 entries | 1.285 | W/(m·K) | — | ||
| ↳ | 1.285 | W/(m·K) | 27°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.547 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4700 | eV | — | ||
| ↳ | 0.9510 | eV | — | ||
Electrical Conductivity(σ) | 30.80 | S/cm | 27°C | ||
Electrical Resistivity(ρe) | 0.000325 | Ω·m | 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Thermoelectric Power Factor(PF) | 0.000119 | W/(m·K²) | 27°C | ||
Seebeck Coefficient(S)2 entries | -196.2 | μV/K | 27°C | ||
| ↳ | -109.2 | µV/K | — | ||
Thermoelectric Figure of Merit(zT) | 0.02767 | - | 27°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5590 | eV/atom | — |