K2Bi8Se13 — Properties & Data | MatWorld

K2Bi8Se13

Name: K2Bi8Se13
Brand: MatWorld

semiconductor

· K2Bi8Se13

K2Bi8Se13 is a quaternary chalcogenide semiconductor compound combining potassium, bismuth, and selenium in a layered crystal structure. This material belongs to the family of bismuth-based selenides, which are of significant research interest for thermoelectric and optoelectronic applications due to their narrow bandgap and layered topology. While primarily a laboratory compound rather than a commercial product, K2Bi8Se13 represents the broader potential of complex chalcogenide systems for energy conversion and advanced electronics where low thermal conductivity coupled with electronic functionality is advantageous.

thermoelectric devicessolid-state coolinginfrared detectorsresearch semiconductorslow-dimensional electronicstopological materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)2 entries	1.285	W/(m·K)	Measured · 27°C
↳	1.285	W/(m·K)	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.547	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.4700	eV	Measured
↳	0.9510	eV	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	15.99	-	DFT · OptB88vdW
Electrical Conductivity(σ)	30.80	S/cm	Measured · 27°C
Electrical Resistivity(ρe)	0.000325	Ω·m	Measured · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)3 entries	0.000119	W/(m·K²)	Measured · 27°C
↳	0.000858	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000433	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)3 entries	-196.2	μV/K	Measured · 27°C
↳	-109.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	344.7	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Thermoelectric Figure of Merit(zT)	0.02767	-	Measured · 27°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.5590	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K2Bi8Se13

Thermal Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

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