K₂Y₂Si₂S₈ is a rare-earth silicate sulfide semiconductor compound combining yttrium, silicon, and sulfur in an ionic lattice structure. This is an exploratory/research-phase material investigated primarily for its potential in wide-bandgap semiconductor applications, photonic devices, and high-temperature electronics where traditional semiconductors reach their thermal limits. The rare-earth yttrium component and mixed anion chemistry (silicate-sulfide) position it as a candidate for next-generation optoelectronic materials, though industrial adoption remains limited and material processing routes are still under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.808 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.552 | eV/atom | — |