K2 Y2 Ge2 S8

semiconductor

· K2 Y2 Ge2 S8

K2Y2Ge2S8 is a quaternary chalcogenide semiconductor compound combining potassium, yttrium, germanium, and sulfur in a layered crystal structure. This material belongs to the family of rare-earth germanium sulfides, which are primarily investigated in research settings for potential optoelectronic and photonic applications due to their tunable bandgap and interesting optical properties in the infrared region. The compound is not widely established in mainstream industrial production but represents promising potential for nonlinear optical devices, infrared detectors, and wide-bandgap semiconductor applications where traditional III-V materials face limitations.

infrared optics and sensingnonlinear optical deviceswide-bandgap semiconductorsresearch-phase photonicsrare-earth compound semiconductorsnext-generation detector materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.322	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.377	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K2 Y2 Ge2 S8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control