K2Sn4I10 is a hybrid halide perovskite semiconductor composed of potassium, tin, and iodine. This is an experimental research material studied for next-generation optoelectronic and photovoltaic applications, belonging to the class of tin-based halide perovskites that offer potential advantages over lead-based alternatives including reduced toxicity and tunable bandgaps. The material family is of significant interest for solid-state lighting, photodetectors, and thin-film solar cells, where its layered or 3D crystal structure and semiconducting properties could enable efficient light absorption and charge transport.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.509 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7880 | eV/atom | — |