K2Sn2S2O8F2 is an oxysulfide fluoride semiconductor compound containing potassium, tin, sulfur, oxygen, and fluorine. This is a research-phase material representing an emerging class of mixed-anion semiconductors that combine oxides, sulfides, and fluorides to engineer band gaps and electronic properties beyond traditional single-anion compounds. While not yet established in mainstream commercial applications, materials in this family are being investigated for photovoltaic devices, photoelectrochemical systems, and other optoelectronic applications where the mixed-anion framework offers potential advantages in band alignment and charge carrier dynamics compared to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.56 | GPa | — | ||
Shear Modulus(G) | 15.95 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.897 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.886 | eV/atom | — |