K2Sn1As2S6 is a ternary chalcogenide semiconductor compound combining potassium, tin, arsenic, and sulfur elements. This material belongs to the sulfide semiconductor family and represents an experimental or emerging composition with potential relevance to optoelectronic and solid-state device research, where mixed-metal chalcogenides are investigated for photovoltaic absorption, thermoelectric, and nonlinear optical properties. The compound's specific phase stability and electronic structure make it a candidate for niche applications requiring narrow bandgap semiconductors, though industrial adoption remains limited compared to more mature systems like CdTe or CIGS photovoltaics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,957.1 | ksi | — | ||
Shear Modulus(G) | 2,568.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.063 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6930 | eV/atom | — |