K2Nb2Se4 is a layered transition metal dichalcogenide semiconductor compound composed of potassium, niobium, and selenium. This material is primarily of research interest for next-generation optoelectronic and energy storage applications, with the layered structure characteristic of this material family offering tunable electronic properties and potential advantages in devices requiring van der Waals heterostructures, where weak interlayer interactions enable novel stacking configurations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 61.89 | GPa | — | ||
Shear Modulus(G) | 39.45 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8041 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.067 | eV/atom | — |