K₂Nb₂S₄ is a layered transition metal dichalcogenide semiconductor compound combining potassium, niobium, and sulfur in a two-dimensional crystal structure. This material is primarily investigated in research contexts for its potential in optoelectronic and photocatalytic applications, leveraging the electronic properties characteristic of the niobium dichalcogenide family. Engineers and researchers consider K₂Nb₂S₄ for next-generation energy conversion and light-responsive device architectures where the layered structure enables tunable bandgap and enhanced interfacial interactions.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,932.7 | ksi | — | ||
Shear Modulus(G) | 6,983.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8883 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.325 | eV/atom | — |