K2 Hg2 As2
semiconductorK2Hg2As2 is an intermetallic semiconductor compound combining potassium, mercury, and arsenic elements, belonging to the class of complex metal-based semiconductors. This material is primarily of research and theoretical interest rather than established in commercial production, with potential applications in solid-state electronics and thermoelectric devices where unconventional band structures and heavy-element semiconductors offer opportunities for tuning electronic properties. The compound exemplifies materials exploration in the broader family of mercury- and arsenic-containing semiconductors, which have historically been investigated for specialized optoelectronic and sensing applications despite toxicity and processing challenges that limit widespread industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |