K2 Ge1 I6 O18 — Properties & Data | MatWorld

K2 Ge1 I6 O18

semiconductor

· K2 Ge1 I6 O18

K₂Ge₁I₆O₁₈ is a mixed-valence germanium iodide oxide semiconductor, representing a complex inorganic compound combining heavy metal (germanium) and halide (iodide) chemistry with oxide frameworks. This material belongs to the family of halide perovskites and related semiconductor compounds currently under investigation for optoelectronic and photovoltaic applications, though it remains largely in the research phase rather than established industrial production.

photovoltaic researchoptoelectronic deviceshalide perovskite alternativesradiation detection (emerging)materials research & developmentnext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.083	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7930	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K2 Ge1 I6 O18

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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