K2Bi8Se13 is a bismuth selenide-based compound semiconductor belonging to the chalcogenide family, synthesized primarily for research into novel thermoelectric and optoelectronic materials. This material is not yet commercially established but represents ongoing investigation into bismuth chalcogenides as potential alternatives to conventional semiconductors, with interest driven by possible applications in thermal management and infrared detection where bismuth-based compounds show promise due to their narrow bandgap and layered crystal structures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9506 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5590 | eV/atom | — |