K12 Cd2 Te8

semiconductor

· K12 Cd2 Te8

K12 Cd2 Te8 is a cadmium telluride-based semiconductor compound, likely a ternary or complex chalcogenide phase with potential applications in photovoltaic and radiation detection systems. This material belongs to the II-VI semiconductor family and represents research-level exploration of cadmium telluride derivatives for advanced optoelectronic devices. While cadmium telluride itself is well-established in thin-film photovoltaics and gamma-ray detectors, complex phases like this are typically investigated for band-gap engineering, improved carrier transport, or enhanced radiation sensitivity compared to binary CdTe.

thin-film photovoltaicsgamma-ray detectorsX-ray imaging sensorsradiation detectionoptoelectronic researchsemiconductor band-gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.517	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.048	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K12 Cd2 Te8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control