K12 Bi4 Te12

semiconductor

· K12 Bi4 Te12

K12 Bi4 Te12 is a bismuth telluride-based compound semiconductor belonging to the chalcogenide family, likely a layered or doped variant of bismuth telluride systems studied for thermoelectric applications. This material is primarily investigated in research and development contexts for solid-state thermal energy conversion, where bismuth telluride compounds are among the most commercially mature thermoelectric materials near room temperature. The K-doping and specific composition suggest optimization for enhanced charge carrier mobility or thermal properties compared to conventional Bi2Te3, making it of interest for applications requiring improved figure-of-merit (ZT) or temperature-dependent performance.

thermoelectric cooling deviceswaste heat recovery systemstemperature control modulesresearch-grade semiconductorssolid-state refrigerationthermal energy harvesting

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.432	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8610	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K12 Bi4 Te12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control