K1 Zn1 As1

semiconductor

· K1 Zn1 As1

ZnAs (zinc arsenide) is a III-V compound semiconductor material composed of zinc and arsenic elements. This material is primarily explored in research contexts for optoelectronic and high-frequency electronic device applications, where its direct bandgap and carrier mobility characteristics make it a candidate for infrared detectors, light-emitting devices, and specialized semiconductor junctions. While less commercially established than GaAs or InP alternatives, ZnAs remains of interest in the semiconductor research community for niche applications requiring specific optical or electrical properties in the mid-infrared spectrum.

infrared detectorsoptoelectronic researchhigh-frequency semiconductorscompound semiconductor junctionsexperimental photonic devicesmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	36.54	GPa	—
Shear Modulus(G)	25.33	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2452	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K1 Zn1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control