K1 Ti2 Bi1 is an experimental titanium-bismuth intermetallic compound in the semiconductor class, representing research into ternary titanium alloys for advanced electronic and structural applications. While primarily in the research phase, titanium-bismuth systems are investigated for potential use in thermoelectric devices, optoelectronic components, and high-temperature semiconductor applications where bismuth's electronic properties can modify titanium's natural characteristics. This material family is notable for exploring alternatives to conventional semiconductors in niche applications requiring combined thermal stability and specific electrical behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,870.8 | ksi | — | ||
Shear Modulus(G) | 3,930.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6500 | eV/atom | — |