K1Na2B1N2 is an experimental boron-nitrogen compound semiconductor combining potassium and sodium alkali metals with a boron-nitrogen framework. This material belongs to the boron-nitride family of wide-bandgap semiconductors, which are of significant research interest for high-temperature, high-power, and UV-transparent device applications where traditional silicon or gallium arsenide semiconductors are inadequate. The incorporation of alkali metals in this composition represents a non-standard doping or structural modification approach, making this compound primarily relevant to materials research rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 47.88 | GPa | — | ||
Shear Modulus(G) | 16.47 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.210 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6860 | eV/atom | — |