K₁N₁O₃ is a potassium nitrate-based ceramic semiconductor compound. While not a commonly commercialized engineering material, it belongs to the family of metal oxide semiconductors and represents a research-phase material of interest for specialized electronic and electrochemical applications. This compound exhibits potential in high-temperature or oxidizing environments where conventional semiconductors would degrade, making it relevant for exploratory work in thermal electronics, sensor development, and electrochemical devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,319.8 | ksi | — | ||
Shear Modulus(G) | 1,011.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.071 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.024 | eV/atom | — |