K1 N1 O2

semiconductor

· K1 N1 O2

K1N1O2 is a potassium-containing oxynitride semiconductor compound, likely a research or specialized material in the oxynitride materials family. While specific industrial production is limited, oxynitrides are studied for photocatalytic applications and advanced semiconductor devices due to their tunable bandgap properties that fall between traditional oxides and nitrides. Engineers consider such materials where conventional semiconductors fall short in chemical stability, light absorption, or catalytic performance under demanding conditions.

photocatalytic water splittingenvironmental remediationadvanced semiconductor researchsolar energy conversionceramic coatings (experimental)high-temperature oxidation resistance

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	3,126.4	ksi	—
Shear Modulus(G)	1,112.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.520	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.006	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K1 N1 O2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control