K1 In1 O3

semiconductor

· K1 In1 O3

K₁In₁O₃ is a ternary oxide semiconductor compound combining potassium, indium, and oxygen. This material belongs to the family of mixed-metal oxides and represents an emerging research compound rather than a widely commercialized material; it is primarily investigated in academic and laboratory settings for its semiconductor properties and potential functional applications. Engineers would consider this material for optoelectronic or photocatalytic device research where the unique electronic structure of potassium-indium oxide systems offers different band gap and carrier dynamics compared to binary oxide semiconductors like In₂O₃ or standalone indium compounds.

photocatalytic materials researchsemiconductor optoelectronicsexperimental thin-film devicesoxide electronicsmaterials chemistry development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	11,158.2	ksi	—
Shear Modulus(G)	4,980.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.944	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.043	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K1 In1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control