K1In1O2 is an indium oxide-based semiconductor compound with a simple 1:1:2 stoichiometry. This material belongs to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors, though it remains primarily in research and development phases rather than established commercial production. The compound is of interest for optoelectronic applications where transparency and electrical conductivity must be balanced, and its mechanical properties suggest potential for integration in thin-film devices and heterostructure systems where both electronic performance and structural stability are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,870.4 | ksi | — | ||
Shear Modulus(G) | 7,582.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.353 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.778 | eV/atom | — |