K1 B6 is a boron-based semiconductor compound, likely a boride material engineered for high-performance electronic or optoelectronic applications. This material belongs to the family of refractory semiconductors, which are valued in industries requiring thermal stability, chemical resistance, and reliable electronic properties at elevated temperatures where conventional semiconductors fail.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,870.2 | ksi | — | ||
Shear Modulus(G) | 16,630 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.09500 | eV/atom | — |