K1 As4 Br1 O6
semiconductorK₁As₄Br₁O₆ is a mixed-halide arsenic oxide semiconductor compound, representing an emerging class of hybrid inorganic materials that combine alkali metal, pnictogens, halogens, and oxygen in a single crystalline lattice. This is primarily a research-phase material rather than an established industrial compound; it belongs to the family of perovskite-related and post-perovskite semiconductors being explored for optoelectronic and photovoltaic applications where conventional materials face stability or toxicity constraints. The arsenic-bromine-oxygen framework offers potential for tunable bandgap and carrier transport properties, making it of interest in next-generation photovoltaic devices, X-ray detection, or radiation-hard semiconductor applications where chemical diversity at the atomic level enables property engineering beyond conventional single-phase semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,738.6 | ksi | — | ||
Shear Modulus(G) | 3,958.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.051 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.393 | eV/atom | — |