K1 As4 Br1 O6
semiconductorK₁As₄Br₁O₆ is a mixed-halide arsenic oxide semiconductor compound, representing an emerging class of hybrid inorganic materials that combine alkali metal, pnictogens, halogens, and oxygen in a single crystalline lattice. This is primarily a research-phase material rather than an established industrial compound; it belongs to the family of perovskite-related and post-perovskite semiconductors being explored for optoelectronic and photovoltaic applications where conventional materials face stability or toxicity constraints. The arsenic-bromine-oxygen framework offers potential for tunable bandgap and carrier transport properties, making it of interest in next-generation photovoltaic devices, X-ray detection, or radiation-hard semiconductor applications where chemical diversity at the atomic level enables property engineering beyond conventional single-phase semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |