IrTaO2S

semiconductor

· IrTaO2S

IrTaO₂S is an experimental mixed-metal oxide-sulfide semiconductor containing iridium, tantalum, oxygen, and sulfur. This compound belongs to the family of transition-metal chalcogenides and oxides being investigated for photocatalytic and electrochemical applications. Research into materials of this composition focuses on band-gap engineering and catalytic activity enhancement, making it of interest where conventional single-component semiconductors fall short in efficiency or selectivity.

photocatalysiswater splittingelectrochemical sensingresearch-stage materialscatalytic coatingshydrogen generation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-0.00000757	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

IrTaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control