IrTaO2S
semiconductor· IrTaO2S
IrTaO₂S is an experimental mixed-metal oxide-sulfide semiconductor containing iridium, tantalum, oxygen, and sulfur. This compound belongs to the family of transition-metal chalcogenides and oxides being investigated for photocatalytic and electrochemical applications. Research into materials of this composition focuses on band-gap engineering and catalytic activity enhancement, making it of interest where conventional single-component semiconductors fall short in efficiency or selectivity.
photocatalysiswater splittingelectrochemical sensingresearch-stage materialscatalytic coatingshydrogen generation
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.