IrSe₂ is a binary compound semiconductor composed of iridium and selenium, belonging to the transition metal dichalcogenide family. It is primarily of research and developmental interest for next-generation electronic and optoelectronic devices, valued for its layered crystal structure and potentially tunable band gap properties. Compared to more established dichalcogenides like MoS₂, IrSe₂ offers the possibility of higher carrier mobility and enhanced spin-orbit coupling due to iridium's heavy element character, making it a candidate material for advanced nanoelectronics, quantum devices, and potentially thermoelectric or catalytic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3396 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2869 | eV/atom | — |