IrS2 is an iridium disulfide semiconductor compound belonging to the transition metal dichalcogenide family. While primarily a research material rather than an established commercial product, it is being investigated for potential applications in nanoelectronics, photocatalysis, and energy storage due to the unique electronic properties that arise from the combination of a heavy transition metal (iridium) with sulfur. Engineers would consider this material for exploratory projects in next-generation semiconductor devices or catalytic systems where the electronic structure of layered dichalcogenides could offer advantages over more conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,481.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 12,783.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3190 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04480 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.4598 | eV/atom | — | ||
| ↳ | -0.3763 | eV/atom | — |