IrNbO2S

semiconductor

· IrNbO2S

IrNbO₂S is an experimental ternary oxide-sulfide semiconductor combining iridium, niobium, oxygen, and sulfur. This compound belongs to the family of mixed-metal chalcogenides and oxides, which are of significant research interest for photocatalytic and electrocatalytic applications due to their tunable bandgaps and enhanced charge carrier dynamics. While not yet commercialized at scale, materials in this compositional family are being investigated as alternatives to conventional semiconductors for energy conversion and environmental remediation, offering potential advantages in light absorption and catalytic activity compared to single-metal oxides or sulfides.

photocatalytic water splittingelectrocatalytic CO₂ reductionhydrogen evolution catalystsenvironmental remediationsolar energy conversionresearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—
Magnetic Moment(μB)	-0.00000156	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

IrNbO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control