IrGaON2

ceramic

· IrGaON2

IrGaON₂ is an experimental ternary ceramic compound combining iridium, gallium, nitrogen, and oxygen phases—a research-stage material being investigated for wide-bandgap semiconductor and advanced ceramic applications. This material family is of interest for high-temperature electronics, optoelectronic devices, and potentially extreme-environment applications where thermal stability and chemical resistance are critical; however, it remains largely in development and is not yet widely deployed in production engineering systems, making it most relevant for R&D teams exploring next-generation materials.

wide-bandgap semiconductorshigh-temperature electronics researchoptoelectronic device developmentadvanced ceramic coatingsextreme environment materials R&D

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00181	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.540	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

IrGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental