IrGaO₂N is an experimental oxynitride ceramic compound combining iridium, gallium, oxygen, and nitrogen—a research-phase material belonging to the family of transition metal oxynitrides. This material family is being investigated for electronic and photocatalytic applications where the combination of metal oxides and nitrides can enable band gap engineering and enhance chemical reactivity compared to conventional single-phase ceramics. IrGaO₂N remains primarily a laboratory compound rather than an established commercial material, with potential applications in photocatalysis, optoelectronics, and advanced ceramic composites, though industrial deployment and long-term performance data are not yet established.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.01439 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.360 | eV/atom | — |