IrGaN3 is an experimental ternary ceramic compound combining iridium, gallium, and nitrogen, belonging to the family of refractory nitride ceramics. This material is primarily of research interest for high-temperature and extreme-environment applications where thermal stability and chemical resistance are critical, positioning it as an exploratory alternative to conventional nitride ceramics like GaN and AlN for specialized aerospace and semiconductor contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.03472 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.400 | eV/atom | — |