IrBON2

semiconductor

· IrBON2

IrBON2 is an experimental semiconductor compound combining iridium with boron and nitrogen, belonging to the class of refractory semiconductor materials. Research into iridium boron nitride compounds targets high-temperature electronics, extreme environment sensing, and wide-bandgap device applications where conventional semiconductors fail; the material remains largely in development phase with potential advantages in thermal stability and radiation hardness compared to silicon or gallium nitride alternatives.

high-temperature electronicsradiation-hardened sensorsextreme environment deviceswide-bandgap semiconductorsresearch/prototype applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	0.0000773	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

IrBON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control