Ir4As12 is a binary intermetallic compound combining iridium and arsenic in a stoichiometric ratio, belonging to the class of transition metal arsenides. This material is primarily of research interest as a potential semiconductor or thermoelectric compound, with applications being explored in high-temperature electronics and energy conversion systems. The iridium-arsenic system offers potential advantages in thermal stability and electronic properties compared to conventional semiconductors, though practical engineering applications remain limited and the material is not yet widely commercialized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1151 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3750 | eV/atom | — |