Ir₂N₄ is an iridium nitride semiconductor compound being investigated in materials research for its potential as a hard, refractory material with semiconductor properties. This experimental compound belongs to the transition metal nitride family, which has attracted interest for applications requiring high hardness, thermal stability, and electronic functionality in extreme environments. While not yet commercially established at scale, iridium nitrides are being explored as candidates for next-generation coatings, high-temperature electronics, and catalytic applications where the combination of mechanical robustness and electronic properties could offer advantages over traditional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 334.5 | GPa | — | ||
Shear Modulus(G) | 211.3 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3590 | eV/atom | — |