Ir1 N1
semiconductorIr1N1 is an experimental intermetallic nitride compound combining iridium and nitrogen, belonging to the family of refractory metal nitrides under investigation for advanced structural and functional applications. This material is primarily a research-phase compound rather than an established industrial material, with potential applications in high-temperature structural systems, wear-resistant coatings, and electronic devices where the combination of iridium's exceptional hardness and chemical stability with nitrogen's strengthening effects could be advantageous. The material's development is motivated by the pursuit of superior properties in extreme environments, such as aerospace propulsion systems and catalytic or electronic components, though widespread commercial adoption remains limited pending further characterization and scalability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |