InZrO2F

semiconductor

· InZrO2F

InZrO2F is a mixed-metal oxide fluoride semiconductor compound combining indium, zirconium, oxygen, and fluorine. This is a research-stage material belonging to the broader family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors, potentially developed for applications requiring enhanced electrical conductivity, optical transparency, or fluorine-induced surface modifications. The incorporation of fluorine into zirconium-indium oxide is notable for potentially improving charge carrier density, reducing work function, or enhancing interface properties compared to conventional binary indium oxide or zirconium oxide systems.

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Compliance & Regulations

?EAR?ISO 10993?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.200	eV	—
Magnetic Moment(μB)	-5.865e-18	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Safety & Biocompatibility

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InZrO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Safety & Biocompatibility