InZrN3
semiconductor· InZrN3
InZrN3 is a ternary nitride semiconductor compound combining indium, zirconium, and nitrogen elements. This material is primarily of research interest rather than established in high-volume industrial production, representing exploration within the wide-bandgap nitride family—a class known for high-temperature and high-power electronic device potential. The InZrN3 composition is studied as part of broader efforts to develop advanced nitride semiconductors for next-generation power electronics, optoelectronics, and extreme-environment applications where conventional semiconductors reach performance limits.
Wide-bandgap semiconductor researchHigh-temperature electronicsPower device developmentOptoelectronic materials scienceExtreme-environment applications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.