InZrN3

semiconductor

· InZrN3

InZrN3 is a ternary nitride semiconductor compound combining indium, zirconium, and nitrogen elements. This material is primarily of research interest rather than established in high-volume industrial production, representing exploration within the wide-bandgap nitride family—a class known for high-temperature and high-power electronic device potential. The InZrN3 composition is studied as part of broader efforts to develop advanced nitride semiconductors for next-generation power electronics, optoelectronics, and extreme-environment applications where conventional semiconductors reach performance limits.

Wide-bandgap semiconductor researchHigh-temperature electronicsPower device developmentOptoelectronic materials scienceExtreme-environment applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	2.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InZrN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control