InZnOFN is a complex oxide ceramic compound containing indium, zinc, oxygen, and fluorine/nitrogen dopants, developed primarily as a research material for advanced electronic and optoelectronic applications. This material belongs to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors, with dopant chemistry designed to enhance electrical conductivity, optical transparency, or ferromagnetic properties depending on synthesis conditions. The fluorine or nitrogen incorporation distinguishes it from conventional indium-zinc oxide (IZO), offering tuned electronic behavior relevant to next-generation thin-film devices where standard ITO or ZnO alternatives have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.3769 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.160 | eV/atom | — |