InZnO₃ is an indium zinc oxide ceramic compound, a ternary metal oxide belonging to the family of transparent conducting oxides and wide-bandgap semiconductors. This material is primarily investigated in research contexts for optoelectronic and photocatalytic applications, where its semiconductor properties and potential transparency make it relevant to next-generation device engineering. InZnO₃ offers potential advantages in photocatalysis, gas sensing, and thin-film electronics compared to binary oxides, though it remains largely in the developmental stage with ongoing optimization of synthesis and processing routes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00255 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.8230 | eV/atom | — | ||
| ↳ | 1.060 | eV/atom | — |