InZnO2N

ceramic

· InZnO2N

InZnO2N is an experimental ceramic compound combining indium, zinc, oxygen, and nitrogen—a quaternary oxynitride belonging to the wider family of metal oxynitrides. This research material is being investigated for semiconductor and optoelectronic applications where the nitrogen incorporation modifies bandgap and electronic properties compared to conventional oxide ceramics. Primary interest lies in thin-film transistors, photocatalysis, and transparent conducting oxide alternatives, where the material's mixed-anion structure offers tunable electrical and optical characteristics not easily achieved in binary or ternary oxides.

transparent conducting filmsthin-film transistorsphotocatalytic coatingsoptoelectronic devicessemiconductor researchdisplay technology (experimental)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9474	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InZnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental